Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Patent
1993-03-02
1994-11-01
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
117 5, 117904, 117929, C30B 2900
Patent
active
053604776
ABSTRACT:
A process for fabricating diamond from a starting powder material containing carbon as the principal component, and said process comprising bringing said powder material under high pressure, wherein, said powder material containing carbon as the principal component is a powder material containing C.sub.60 and/or carbon microtubules as the principal component, and
REFERENCES:
patent: 2947611 (1960-08-01), Bundy
patent: 3423177 (1969-01-01), Bovenkerk
patent: 5176788 (1993-01-01), Kabacoff et al.
patent: 5209916 (1993-05-01), Gruen
Inoue Tohru
Kadono Masaya
Miyanaga Akiharu
Garrett Felisa
Kunemund Robert
Semiconductor Energy Laboratory Co,. Ltd.
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