Method for forming oxide thin film and the treatment of silicon

Details Method for forming oxide thin film and the treatment of silicon Method for forming oxide thin film and the treatment of silicon

1996-05-10

1998-09-22

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 89, 117 94, 4272481, 427250, C03B 2502

Patent

active

058109234

ABSTRACT:
The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available.
Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained.

REFERENCES:
patent: 3655429 (1972-04-01), Deklerk
patent: 4950643 (1990-08-01), Aqostinelli et al.

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