Ultra-high oxide to photoresist selective etch of...
Ultra-thin resist and barrier metal/oxide hard mask for...
Ultra-thin resist and nitride/oxide hard mask for metal etch
Undercut process with isotropic plasma etching at package level
Undoped and fluorinated amorphous carbon film as pattern...
Undoped silicon dioxide as etch mask for patterning of doped...
Undoped silicon dioxide as etch stop for selective etch of...
Uniform gas flow arrangements
Unique process chemistry for etching organic low-k materials
Use of a plasma source to form a layer during the formation...
Use of a U-groove as an alternative to using a V-groove for...
Use of ammonia for etching organic low-k dielectrics
Use of ammonia for etching organic low-k dielectrics
Use of amorphous carbon hard mask for gate patterning to...
Use of multilayer amorphous carbon ARC stack to eliminate...
Use of multiple etching steps to reduce lateral etch undercut
Use of pulsed grounding source in a plasma reactor
Use of silicon containing gas for CD and profile feature...
Use of silicon containing imaging layer to define...
Using ONO as hard mask to reduce STI oxide loss on low voltage d