Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-10-18
2005-10-18
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S460000, C438S700000, C438S710000, C216S017000
Reexamination Certificate
active
06955989
ABSTRACT:
The present disclosure relates that by modifying chip die dicing methodology to a U-groove profile from a V-groove profile by modifying the second etch step to be a dry etch instead of a wet etch results in a direct cost savings by eliminating a more expensive process step, as well as the need for stripping the developed photoresist layer. Furthermore, going to a U-groove profile accomplishes additional indirect and greater cost savings resulting from increased process throughput, improved yield, and reduced metal layer defects.
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Hosier Paul A.
Jedlicka Josef E.
Perregaux Alain E.
Salatino Nicholas J.
Tandon Jagdish C.
Vinh Lan
Wait Christopher D.
Xerox Corporation
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