Use of silicon containing gas for CD and profile feature...

Details Use of silicon containing gas for CD and profile feature... Use of silicon containing gas for CD and profile feature...

2006-08-29

2006-08-29

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S724000, C438S736000

Reexamination Certificate

active

07098141

ABSTRACT:
A semiconductor manufacturing process provides a shallow trench in a silicon layer using a silicon containing etch gas to provide controlled top and/or bottom rounding of the trench or to enhance profile control and/or critical dimension control by controlled deposition across a semiconductor substrate. A gate structure can be etched on a semiconductor substrate using a silicon containing gas to enhance profile control and/or critical dimension control.

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