Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-03-18
1998-08-04
Brenean, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438716, 438935, 427 9, 20429815, 20429807, 20429833, H01L 21302
Patent
active
057893241
ABSTRACT:
A uniform gas flow is provided at the surface of a planar device or wafer in a processing system having a substantially cylindrical chamber through which processing gases flow toward an asymmetrically located outlet port by using an appropriately disposed collar or baffle along the gas stream in the chamber in the plane of the surface of the planar device or wafer.
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patent: 5552017 (1996-09-01), Jang et al.
patent: 5620576 (1997-04-01), Wordenweber
Canale Anthony John
Cox Randy Dean
Grimard Dennis Stanley
Hetrick Tracy Charles
Alanko Anita
Brenean R. Bruce
International Business Machines - Corporation
Leas James M.
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