Use of ammonia for etching organic low-k dielectrics

Details Use of ammonia for etching organic low-k dielectrics Use of ammonia for etching organic low-k dielectrics

2005-05-17

2005-05-17

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S712000, C438S714000, C438S720000, C216S067000, C216S072000

Reexamination Certificate

active

06893969

ABSTRACT:
Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.

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