Ultra-thin resist and nitride/oxide hard mask for metal etch

Details Ultra-thin resist and nitride/oxide hard mask for metal etch Ultra-thin resist and nitride/oxide hard mask for metal etch

1998-12-02

2000-02-01

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438636, 438736, 438723, 438724, 438725, 438720, 430 5, H01L 21302

Patent

active

060202696

ABSTRACT:
In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a silicon nitride layer over the oxide layer; depositing an ultra-thin photoresist over the silicon nitride layer, the ultra-thin photoresist having a thickness less than about 2,000 .ANG.; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the silicon nitride layer; etching the exposed portion of the silicon nitride layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.

REFERENCES:
patent: 5369053 (1994-11-01), Fang
patent: 5876903 (1999-03-01), Ng et al.
patent: 5930634 (1999-07-01), Hause et al.

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