Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-04-26
2005-04-26
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
Reexamination Certificate
active
06884733
ABSTRACT:
A method of producing an integrated circuit eliminates the need to re-oxidize polysilicon gate conductors and lines prior to removal of a hard mask used to form the gate conductors. A layer of polysilicon is provided above a semiconductor substrate. The layer of polysilicon is then doped. A mask material comprising amorphous carbon is provided above the layer of polysilicon, and the layer of mask material is patterned to form a mask. A portion of the layer of polysilicon is removed according to the mask, and the mask is removed.
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Bell Scott A.
Brown David E.
Dakshina-Murthy Srikanteswara
Fisher Philip A.
Advanced Micro Devices , Inc.
Foley & Lardner LLP
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