Undoped and fluorinated amorphous carbon film as pattern...

Details Undoped and fluorinated amorphous carbon film as pattern... Undoped and fluorinated amorphous carbon film as pattern...

2005-09-06

2005-09-06

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S720000

Reexamination Certificate

active

06939808

ABSTRACT:
A method for etching a metal layer formed on a substrate to form a metal line, using an amorphous carbon layer as a pattern mask. One embodiment of the method of the invention etches a metal layer formed on a substrate, for forming a metal line, by depositing an amorphous carbon layer on the metal layer, patterning the amorphous carbon layer to provide a pattern mask on the metal layer, thus exposing portions of said metal layer; and etching the exposed portions of the metal layer, to form a metal line. In an embodiment, the metal layer comprises a copper layer.

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