Use of a plasma source to form a layer during the formation...

Details Use of a plasma source to form a layer during the formation... Use of a plasma source to form a layer during the formation...

2007-01-09

2008-09-30

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S695000, C438S623000, C438S399000

Reexamination Certificate

active

07429535

ABSTRACT:
A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

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