Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-01
2006-08-01
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S725000
Reexamination Certificate
active
07084071
ABSTRACT:
A method of producing an integrated circuit includes providing a layer of polysilicon material above a semiconductor substrate and providing an amorphous carbon layer over the polysilicon material layer. The amorphous carbon layer comprises at least one undoped amorphous carbon layer and at least one doped amorphous carbon layer. A portion of the amorphous carbon layer is removed to form a hard mask, and the polysilicon material layer is etched according to the hard mask to form a line of polysilicon material.
REFERENCES:
patent: 4382100 (1983-05-01), Holland
patent: 5185293 (1993-02-01), Franke et al.
patent: 5357119 (1994-10-01), Wang et al.
patent: 5385762 (1995-01-01), Prins
patent: 5656128 (1997-08-01), Hashimoto et al.
patent: 5679608 (1997-10-01), Cheung et al.
patent: 5721090 (1998-02-01), Okamoto et al.
patent: 5759746 (1998-06-01), Azuma et al.
patent: 5776602 (1998-07-01), Ueda et al.
patent: 5837357 (1998-11-01), Matsuo et al.
patent: 5891575 (1999-04-01), Marchywka et al.
patent: 5981398 (1999-11-01), Tsai et al.
patent: 6030541 (2000-02-01), Adkisson et al.
patent: 6121158 (2000-09-01), Benchikha et al.
patent: 6140200 (2000-10-01), Eldridge
patent: 6171343 (2001-01-01), Dearnaley et al.
patent: 6350390 (2002-02-01), Liu et al.
patent: 6365320 (2002-04-01), Foote et al.
patent: 6368924 (2002-04-01), Mancini et al.
patent: 6388924 (2002-05-01), Nasu
patent: 6413852 (2002-07-01), Grill et al.
patent: 6428894 (2002-08-01), Babich et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6596553 (2003-07-01), Lin et al.
patent: 6673684 (2004-01-01), Huang et al.
patent: 6750127 (2004-06-01), Chang et al.
patent: 6764949 (2004-07-01), Bonser et al.
Yamaguchi, A. et al., “Ar Ion implantation into Resist For Etching Resistance Improvement”, Proceedings of SPIE vol. 4345 (2001), pp. 655-664.
Borzenko, V. et al., “The Effect of Ion Implantation On Polymer Mask Resistance To Ion Beam Etching”, Vacuum, 38, 1007 (1988), pp. 1007-1009.
R. Gago, et al., “Bonding and hardness in nonhydrogenated carbon films with moderate sp3content”, Journal of Applied Physics, vol. 87, No. 11, Jun. 1, 2000, 7 pgs.
Wolf, S., Tauber, R. N., “Silicon Processing For the VLSI Era”, Lattice Press, Sunset Beach, CA; 1986; pp. 322, 384-385, 556-557.
U.S. Appl. No. 10/215,173, entitled “Use of Amorphous Carbon Hard Mask for Gate Patterning to Eliminate Requirement of Poly Re-Oxidation”, as filed on Aug. 8, 2002, including claims, drawings, and abstract (29 pages).
U.S. Appl. No. 10/277,760, entitled “Sacrificial Air Gap Layer for Insulation of Metals”, as filed on Aug. 8, 2002, including claims, drawings, and abstract (17 pages).
U.S. Appl. No. 10/217,730, entitled “Ion Implantation to Modulate Amorphous Carbon Stress”, as filed on Aug. 13, 2002, including claims, drawings, and abstract (29 pages).
U.S. Appl. No. 10/424,420, entitled “Use of Amorphous Carbon for Gate Patterning”, as filed on Apr. 28, 2003, by including claims, drawings, and abstract (30 pages).
U.S. Appl. No. 10/230,794, entitled “Formation of Amorphous Carbon Arc Stack Having Graded Transition Between Amorphous Carbon and Arc Material”, as filed on Aug. 29, 2002, including claims, drawings, and abstract (29 pages).
U.S. Appl. No. 10/230,775, entitled “Use of Buffer Dielectric Layer with Amorphous Carbon Mask to Reduce Line Warpage”, as filed on Aug. 29, 2002, including claims, drawings, and abstract (28 pages).
U.S. Appl. No. 10/335,726, entitled “Use of Diamond as a Hard Mask Material”, as filed on Jan. 2, 2003, including claims, drawings, and abstract (26 pages).
U.S. Appl. No. 10/424,675, entitled “Selective Stress-Inducing Implant and Resulting Pattern Distortion in Amorphous Carbon Patterning”, as filed on Apr. 28, 2003, including claims, drawings, and abstract (28 pages).
U.S. Appl. No. 10/445,129, entitled “Modified Film Stack and Patterning Strategy for Stress Compensation and Prevention of Pattern Distortion in Amorphous Carbon Gate Patterning”, as filed on May 20, 2003, including claims, drawings, and abstract (29 pages).
Bell Scott A.
Dakshina-Murthy Srikanteswara
Huang Richard J.
Nguyen Richard C.
Tabery Cyrus E.
Advanced Micro Devices , Inc.
Deo Duy-Vu N.
LandOfFree
Use of multilayer amorphous carbon ARC stack to eliminate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Use of multilayer amorphous carbon ARC stack to eliminate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of multilayer amorphous carbon ARC stack to eliminate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3684140