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CMOS device having retrograde n-well and p-well

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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CMOS device on hybrid orientation substrate comprising equal...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS device on ultrathin SOI with a deposited raised...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS device on ultrathin SOI with a deposited raised...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS device structure with improved PFET gate electrode

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
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CMOS device structure with reduced risk of salicide bridging and

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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CMOS device using additional implant regions to enhance ESD...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS device with asymmetric gate strain

Active solid-state devices (e.g. – transistors – solid-state diode – Mosfet type gate sidewall insulating spacer
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CMOS device with deep current path for ESD protection

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS device with dual polycide gates and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS device with improved performance and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS device with improved wiring density

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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CMOS device with perpendicular channel current directions

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – With current flow along specified crystal axis
Patent

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CMOS device with stressed sidewall spacers

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS device with trench structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS device with zero soft error rate

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS devices adapted to prevent latchup and methods of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS devices comprising thin film transistors arranged on a subs

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent

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CMOS devices hardened against total dose radiation effects

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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CMOS devices having minimized drain contact area

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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