CMOS device having retrograde n-well and p-well
CMOS device on hybrid orientation substrate comprising equal...
CMOS device on ultrathin SOI with a deposited raised...
CMOS device on ultrathin SOI with a deposited raised...
CMOS device structure with improved PFET gate electrode
CMOS device structure with reduced risk of salicide bridging and
CMOS device using additional implant regions to enhance ESD...
CMOS device with asymmetric gate strain
CMOS device with deep current path for ESD protection
CMOS device with dual polycide gates and method of...
CMOS device with improved performance and method of...
CMOS device with improved wiring density
CMOS device with perpendicular channel current directions
CMOS device with stressed sidewall spacers
CMOS device with trench structure
CMOS device with zero soft error rate
CMOS devices adapted to prevent latchup and methods of...
CMOS devices comprising thin film transistors arranged on a subs
CMOS devices hardened against total dose radiation effects
CMOS devices having minimized drain contact area