CMOS device structure with reduced risk of salicide bridging and

Details CMOS device structure with reduced risk of salicide bridging and CMOS device structure with reduced risk of salicide bridging and

1997-03-24

1998-05-26

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257345, 257371, 257384, 257413, 257900, H01L 2978, H01L 27092

Patent

active

057570450

ABSTRACT:
A method for forming a CMOS device, with improved yield, performance and reliability characteristics, has been developed. Yield improvements have been addressed by the use of a dual insulator spacer, used to reduce the risk of salicide bridging, as well as the use of pocket implantation regions, used to reduce punchthrough leakage. An ultra shallow junction extension region has been created in a peripheral channel region, reducing the resistance of this region, thus enhancing the performance of the CMOS device. In addition, ultra lightly doped source and drain regions are used to relax reliability concerns, regarding hot electron injection.

REFERENCES:
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4729001 (1988-03-01), Haskell
patent: 4735680 (1988-04-01), Yen
patent: 4912061 (1990-03-01), Nasr
patent: 4935379 (1990-06-01), Toyoshima
patent: 5439839 (1995-08-01), Jang
patent: 5449937 (1995-09-01), Arimura et al.
patent: 5532508 (1996-07-01), Kaneko et al.
patent: 5675166 (1997-10-01), Ilderem et al.
patent: 5712503 (1998-01-01), Kim et al.

Affiliated with

Also associated with

Rating

CMOS device structure with reduced risk of salicide bridging and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS device structure with reduced risk of salicide bridging and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS device structure with reduced risk of salicide bridging and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1964513