Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-02-10
1999-01-26
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 69, 257 72, 257350, 257353, H01L 2904
Patent
active
058641513
ABSTRACT:
In a circuit configuration comprising an n-channel thin-film transistor and a p-channel thin-film transistor integrally produced on a single substrate, a lightly-doped drain (LDD) region is formed selectively in the n-channel thin-film transistor, and damages to semiconductor layers caused when implanting impurity ions are balanced between the n- and p-channel thin-film transistors. This configuration achieves a balance between the n- and p-channel thin-film transistors and thereby provides high characteristics CMOS circuit.
REFERENCES:
patent: 4621276 (1986-11-01), Halhi
patent: 5710606 (1998-01-01), Nakajima et al.
patent: 5712495 (1998-01-01), Suzawa
Fukunaga Takeshi
Yamazaki Shunpei
Semiconductor Energy Laboratory Co,. Ltd.
Wallace Valencia
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