CMOS devices adapted to prevent latchup and methods of...

Details CMOS devices adapted to prevent latchup and methods of... CMOS devices adapted to prevent latchup and methods of...

2006-07-10

2009-11-10

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S384000, C257SE27063, C257SE29121, C438S233000, C438S586000

Reexamination Certificate

active

07615828

ABSTRACT:
In a first aspect, a first apparatus is provided. The first apparatus is a semiconductor device on a substrate that includes (1) a first metal-oxide-semiconductor field-effect transistor (MOSFET); (2) a second MOSFET coupled to the first MOSFET, wherein portions of the first and second MOSFETs form first and second bipolar junction transistors (BJTs) which are coupled into a loop; and (3) a conductive region that electrically couples a source diffusion region of the first or second MOSFET with a doped well region below the source diffusion region. The conductive region is adapted to prevent an induced current from forming in the loop. Numerous other aspects are provided.

REFERENCES:
patent: 6018180 (2000-01-01), Cheek et al.
patent: 6180475 (2001-01-01), Cheek et al.
patent: 7432560 (2008-10-01), Lim et al.

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