CMOS device on hybrid orientation substrate comprising equal...

Details CMOS device on hybrid orientation substrate comprising equal... CMOS device on hybrid orientation substrate comprising equal...

2006-03-06

2009-08-11

Gurley, Lynne (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27067, C257SE29004

Reexamination Certificate

active

07573104

ABSTRACT:
Embodiments herein present device, method, etc. for a hybrid orientation scheme for standard orthogonal circuits. An integrated circuit of embodiments of the invention comprises a hybrid orientation substrate, comprising first areas having a first crystalline orientation and second areas having a second crystalline orientation. The first crystalline orientation of the first areas is not parallel or perpendicular to the second crystalline orientation of the second areas. The integrated circuit further comprises first type devices on the first areas and second type devices on the second areas, wherein the first type devices are parallel or perpendicular to the second type devices. Specifically, the first type devices comprise p-type field effect transistors (PFETs) and the second type devices comprise n-type field effect transistors (NFETs).

REFERENCES:
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patent: 7160769 (2007-01-01), White et al.
patent: 2005/0001290 (2005-01-01), Chan et al.
patent: 2005/0083445 (2005-04-01), Kang et al.
patent: 2005/0280121 (2005-12-01), Doris et al.
patent: 2008/0064160 (2008-03-01), Kim et al.
Yang, et al.. “High Performance CMOS Fabricated on Hybrid Substrate With Different Crystal Orientations,” 0-7803-7872-5/03/$17.00. copyright 2003 IEEE—IEDM 03-453, pp. 18.7.1-18.7.4.

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