Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-01-04
2005-01-04
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S019000, C257S063000, C438S048000
Reexamination Certificate
active
06838695
ABSTRACT:
A semiconductor device structure includes a substrate, a dielectric layer disposed on the substrate, first and second stacks disposed on the dielectric layer. The first stack includes a first silicon layer disposed on the dielectric layer, a silicon germanium layer disposed on the first silicon layer, a second silicon layer disposed on the silicon germanium layer, and a third silicon layer disposed on the second silicon layer. The second stack includes a first silicon layer disposed on the dielectric layer, and a second silicon layer disposed on the first silicon layer. Alternatively, the silicon germanium layer includes Boron.
REFERENCES:
patent: 5162246 (1992-11-01), Ozturk et al.
patent: 5241193 (1993-08-01), Pfiester et al.
patent: 5242847 (1993-09-01), Ozturk et al.
patent: 5268324 (1993-12-01), Aitken et al.
patent: 5356821 (1994-10-01), Naruse et al.
patent: 5952701 (1999-09-01), Bulucea et al.
patent: 5998289 (1999-12-01), Sagnes
patent: 6133084 (2000-10-01), Chang et al.
patent: 6180499 (2001-01-01), Yu
patent: 6200866 (2001-03-01), Ma et al.
patent: 6252283 (2001-06-01), Gardner et al.
patent: 6274913 (2001-08-01), Brigham et al.
patent: 6281559 (2001-08-01), Yu et al.
patent: 6339232 (2002-01-01), Takagi
patent: 6451644 (2002-09-01), Yu
patent: 20010015922 (2001-08-01), Ponomarev et al.
patent: 20010028093 (2001-10-01), Yamazaki et al.
Article entitled “Selective low-pressure chemical vapor deposition of Si1-xGex alloys in a rapid thermal processor using dichlorosilane and germane”, by Zhong et al, published in Appl. Phys. Lett. 57 (20), Nov. 12, 1990, pp 2092-2094.
Article entitled “Rapid Thermal Chemical Vapor Deposition of in-situ Boron Doped Polycrystalline SixGel-x”, by Sanganeria et al., published in Journal of Electronic Materials, vol. 21, No. 1, 1992, pp. 61-64.
Chakravarti Ashima B.
Chan Kevin K.
Doris Bruce B.
Uriarte Daniel A.
Abate Joseph P.
Flynn Nathan J.
International Business Machines - Corporation
Wilson Scott R.
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