LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Ultra-high-speed photoconductive devices using semi-insulating l

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Ultra-linear multi-channel field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Ultra-linear multi-channel field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Ultra-low phase noise GaAs MOSFETs

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge

Ultra-low phase noise GE MOSFETs

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-low power basic blocks and their uses

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-low power-delay product NNN/PPP logic devices

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Ultra-sensitive detection techniques

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient

Ultra-shallow junction dopant layer having a peak...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-shallow metal oxide surface channel MOS transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-shallow semiconductor junction formation

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-short channel elevated S/D MOSFETS formed on an ultra-thin

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-short channel recessed gate MOSFET with a buried contact

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-short transistor fabrication scheme for enhanced reliabili

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Ultra-small semiconductor devices having patterned edge planar s

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Ultra-thin alkaline earth metals as stable...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-thin body super-steep retrograde well (SSRW) FET devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-thin body vertical tunneling transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Ultra-thin body vertical tunneling transistor