Ultra-low phase noise GaAs MOSFETs

Details Ultra-low phase noise GaAs MOSFETs Ultra-low phase noise GaAs MOSFETs

1996-11-27

1998-05-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257289, 257410, 257411, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

057478384

ABSTRACT:
A gallium arsenide-based field effect transistor has a passivation layer of aluminum oxide below a gallium arsenide channel and aluminum oxide gate oxide layer formed over the channel. The aluminum oxide layers are treated to reduce the density of surface state impurities, particularly arsenic released in the oxide layer as a result of forming the oxide layer. The low surface state gallium arsenide channel has very low phase noise and is suitable for use as a local oscillator in a heterodyne receiver.

REFERENCES:
patent: 4119993 (1978-10-01), Hartnagel et al.
patent: 4291327 (1981-09-01), Tsang
patent: 4745449 (1988-05-01), Chang et al.
patent: 4843450 (1989-06-01), Kirchner et al.
patent: 5497024 (1996-03-01), Shibuya et al.

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