Ultra-shallow metal oxide surface channel MOS transistor

Details Ultra-shallow metal oxide surface channel MOS transistor Ultra-shallow metal oxide surface channel MOS transistor

2007-08-14

2007-08-14

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000, C257S288000, C257S289000, C438S215000, C438S261000

Reexamination Certificate

active

10761704

ABSTRACT:
An ultra-shallow surface channel MOS transistor and method for fabricating the same have been provided. The method comprises: forming CMOS source and drain regions, and an intervening well region; depositing a surface channel on the surface overlying the well region; forming a high-k dielectric overlying the surface channel; and, forming a gate electrode overlying the high-k dielectric. Typically, the surface channel is a metal oxide, and may be one of the following materials: indium oxide (In2O3), ZnO, RuO, ITO, or LaX-1SrXCoO3. In some aspects, the method further comprises: depositing a placeholder material overlying the surface channel; and, etching the placeholder material to form a gate region overlying the surface channel. In one aspect, the high-k dielectric is deposited prior to the deposition of the placeholder material. Alternately, the high-k dielectric is deposited following the etching of the placeholder material.

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patent: 2006/0011983 (2006-01-01), Fitzgerald

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