Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-02-15
2011-02-15
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C438S048000, C977S724000
Reexamination Certificate
active
07888753
ABSTRACT:
Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.
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patent: 7652342 (2010-01-01), Bertin
patent: 2007/0230241 (2007-10-01), Bockrath
K.L. Ekinci et al., Ultimate limits to inertial mass sensing based upon nanoelectromechanical systems, J. Appl. Phys. 95, 2682-2689 (2004).
K.L. Ekinci et al., Ultrasensitive nanoelectromechanical mass detection, Appl. Phys. Lett. 84, 4469-4471 (2004).
Afzali-Ardakani Ali
Gowda Sudhir
Guha Supratik
Hamann Hendrik F.
Tutuc Emanuel
Alexanian Vazken
Coleman W. David
International Business Machines - Corporation
Michael J. Chang, LLC
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