Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-01-31
2006-01-31
Kielin, Erik (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
Reexamination Certificate
active
06992319
ABSTRACT:
Alternate layers of wide band gap and narrow band gaps of different kinds of semiconductors are used to form multiple channels of a FET. The channels are doped or formed as 2-DEG/2-DHG in narrow band semiconductor by charge supply layer in the wide band gap semiconductor. The different kinds of semiconductors form heterojunctions to confine the electrons/holes in separate thin spikes layers. A number of spikes (3–10 nm thick) of different doped or 2-DEG/2-DHG concentrations in various channels can result in overall electron concentration gradient such as a 1/x3electron/hole concentrations profile. Such an electron/hole concentration gradient can result in a linear variation of drain current with voltage to obtain a wide dynamic range.
REFERENCES:
patent: 5254863 (1993-10-01), Battersby
patent: 5266506 (1993-11-01), Green, Jr.
patent: 5493136 (1996-02-01), Matsuzaki et al.
patent: 5767539 (1998-06-01), Onda
patent: 6121641 (2000-09-01), Ohno
patent: 6414340 (2002-07-01), Brar
Aina Olaleye A.
Fahimulla Ayub M
Hier Harry Stephen
Dolan Jennifer M
Epitaxial Technologies
Kielin Erik
Lin Patent Agent H. C.
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