Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-08-31
1994-07-26
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257432, 257439, 257664, 257775, 257459, 257536, 257537, 257184, 338 15, H01L 2714, H01L 3100, H01L 23485
Patent
active
053329180
ABSTRACT:
An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.
REFERENCES:
patent: 3530298 (1970-09-01), Hubbard et al.
patent: 3716804 (1973-02-01), Groschwitz
patent: 3917943 (1975-11-01), Auston
patent: 3923380 (1975-12-01), Kaisha et al.
patent: 3942132 (1976-03-01), Zinn
patent: 3949224 (1976-04-01), Klingen
patent: 3958862 (1976-05-01), Victor
patent: 3962657 (1976-06-01), Redman et al.
patent: 4020341 (1977-04-01), Javan
patent: 4218618 (1980-08-01), Mourou
patent: 4291323 (1981-09-01), Bachmann
patent: 4293956 (1981-10-01), Alstatt
patent: 4301362 (1981-11-01), Mourou
patent: 4376285 (1983-03-01), Leonberger et al.
patent: 4396833 (1983-08-01), Pan
patent: 4525871 (1985-06-01), Foyt et al.
patent: 4713354 (1987-12-01), Egawa et al.
patent: 4807006 (1989-02-01), Rogers et al.
patent: 4839510 (1989-06-01), Okabe et al.
patent: 4933542 (1990-06-01), Bokor et al.
patent: 4978910 (1990-12-01), Knox et al.
Beneking, "On the Response Behavior of Fast Photoconductive Optical Planar and Coaxial Semiconductor Detectors", IEEE Trans. on Electron Devices, vol. ED-29, No. 9, Sep. 1982, pp. 14314.
Campbell, "Enhanced Protection of GaAs Against Thermal Surface Degradation by Encapsulated Annealing in an Arsine Ambient", Appl. Phys. Lett. 45(1), Jul. 1, 1984, pp. 95-97.
Miller et al., "Molecular-Beam-Epitaxy GaAs Regrowth with Clean Interfaces by Arsenic Passivation," J. Appl. Phys. 57(6), Mar. 15, 1985, pp. 1922-1927.
Rossi et al., "Reduced Reverse Bias Current in Al-GaAs and In.sub.0.75 Ga.sub.0.25 As-GaAs Junctions Containing an Interfacial Arsenic Layer", J. Vac. Sci. Technol. B5(4), Jul./Aug. 1987, pp. 982-984.
Stanley et al., "MBE on InP and Other P-Containing Compounds", The Physics and Technology of Molecular Beam Epitaxy, Plenum Press, N.Y. 1985, pp. 275-311.
Murotani et al., "Growth Temperature Dependence in Molecular Beam Epitaxy of Gallium Arsenide", J. of Crystal Growth, 45, 1978, pp. 302-308.
Neare et al., "Temperature Range for Growth of Auto epitaxial GaAs Films by MBE", J. of Crystal Growth, 43, 1978, pp. 204-208.
Casey et al., "Insulating Layers By MBE", The Physics and Technology & Molecular Beam Epitaxy, Plenum Press, N.Y. 1985, pp. 413-423.
Maezawa et al. "Large Transconductance n.sup.+ -Ge Gate AlGaAs/GaAs MISFET with Thin Gate Insulator", IEEE Electron Device Letters, vol. EDL-7, No. 7, Jul. 1986, pp. 454-456.
Swaminathan et al. "Effect of Growth Temperature on the Photoluminescent Spectra from Sn-doped Ga.sub.1-x Al.sub.x As Grown by Molecular Beam Epitaxy", Appl. Phys. Letter 38(5), Mar. 1, 1981, pp. 347-349.
Zuleeg et al., "Channel and Substrate Currents in GaAs FETs Due to Ionizing Radiation", IEEE Trans. on Nuclear Science, vol. NS-30, No. 6, Dec. 1983, pp. 4151-4156.
Walton et al., "The Effects of Transient Radiation on GaAs Schottky Diode FET Logic Circuits", IEEEE Trans. on Nuclear Science, vol. NS-30, No. 6, Dec. 1983, pp. 4178-4182.
Xin et al., "Capped Versus Capless Heat Treatment of Molecular Beam Epitaxial GaAs", Appl. Phys. Lett. 41(8), Oct. 15, 1982, pp. 742-744.
Weisbuch et al., "Optical Properties and Interface Disorder of GaAs-Al.sub.x Ga.sub.1-x As Multi-Quantum Well Structure", Inst. Phys. Conf. Ser. No. 56, 1981, Chapter 9, pp. 711-720.
Naganuma et al. "GaAs, GaP, and GaAs.sub.1-x Px Films Deposited by Molecular Beam Epitaxy", Physica Status Solidi (a) 31, 1975, pp. 187-200.
Metze et al., "An Investigation of GaAs Films Grown by MBE at Low Substrate Temperatures and Growth Rates", J. Vac. Sci. Technol. B1(2), Apr.-Jun. 1983, pp. 166-169.
McFee et al., "Molecular Beam Epitaxial Growth of InP", J. Electrochem. Soc.=Solid-State Sci. & Technol., vol. 124, 1977, pp. 259-272.
Wicks et al., "Photoluminesence of Al.sub.x Ga.sub.1-x As Grown by Molecular Beam Epitaxy", J. Appl. Phys. 52(9), Sep. 1981, pp. 5792-5796.
Metze et al., "Effects of Very Low Growth Rates on GaAs Grown by Molecular Beam Epitaxy at Low Substrate Temperature", Appl. Phys. Lett. 42(9), May 1, 1983, pp. 818-820.
Donnelly et al., "Monolithic Two-Dimensional Surface-Emitting Arrays of GaAs/AlGaAs Diode Lasers", Appl. Phys. Lett. 51(15), Oct. 12, 1987, pp. 1138-1140.
Bar-Chaim et al., "GaAs Integrated Optoelectronics", IEEE Trans. on Electron Devices, vol. ED-29, No. 9, Sep. 1982, pp. 1372-1381.
Fukuzawa et al., "Monolithic Integration of a GaAlAs Injection Laser with a Schottky-Gate Field Effect Transistor", Appl. Phys. Lett. 36(3), Feb. 1, 1980, pp. 181-183.
Smith et al., "New MBE Buffer For Micron and Quarter-Micron Gate GaAs MESFET's", Proceedings of the IEEE/Cornell Conference on High Speed Semiconductor Devices and Circuits, 1987, p. 229t.
Stall et al., "Deep Levels in Molecular-Beam-Epitaxial GaAs", Electronics Letters, vol. 16, No. 5, Jan. 30, 1980, pp. 171-172.
Smith et al., "New MBE Buffer for Micron and Quarter-Micron Gate GaAs MESFET", IEEE Cornell Conference on High Speed Semiconductor Devices-Abstract, Aug. 11, 1987.
Smith et al., "New MBE Buffer for Micron and Quarter-Micron Gate GaAs MESFETs", IEEE Device Research on High Speed Semiconductor Devices-Abstract, Jun. 24, 1987.
Smith et al., "New MBE Buffer Used to Eliminate Backgating in GaAs MESFETs", MIT Lincoln Laboratory Solid-State Research, Quarterly Technical Report (Distributed Feb. 23, 1987), pp. 1-10.
Chang et al., "Summary Abstract: Protection of an Interrupted Molecular-Beam-Epitaxially Grown Surface by a Thin Epitaxial Layer of InAs" J. Vac. Sci. Technol. 133(2), Mar./Apr. 1985, pp. 518.
Kasahara et al., "Effect of Arsenic Partial Pressure on Capless Anneal of Ion Implanted GaAs", J. of the Electrochem. Society, vol. 126, No. 11, 1979, pp. 1997-2001.
Patte, "Microwave Switching Performance of High-Speed Optoelectronic Switches: An Effiency Comparison of the Basic Types", IEEE Proceedings-I, vol. 128, No. 6, Dec. 1981, pp. 193-196.
Mathur et al., "Carrier Relaxation Mechanisms in CdS.sub.0.5 Se.sub.0.5 Optoelectronic Switches", J. Appl. Phys. 51(9), Sep. 1980, pp. 4889-4893.
Y. Horikoshi, et al. "Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy", J JAP. 25 (1986), Oct., No. 10.
"New MBE Buffer Used to Eliminate Backgating in GaAs MESFET's", Smith et al., IEEE Electron Device Letters 9, Feb./1988, No. 2. pp. 77-80.
"Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy", Horikoshi et al., Japanese Journal of Applied Physics 25 (1986) Oct. No. 10, part 2, pp. L868-L870.
"Gain and Bandwidth of Fast Near-Infrared Photodetectors: A Comparison of Diodes, Phototransistors, and Photoconductive Devices", IEEE Transactions on Electron Devices, vol. Ed-29, No. 9, Sep. 1982, pp. 1420-1431, Beneking.
"High Speed InP Optoelectronic Switch", Leonberger et al., Appl. Phys. Lett. 35(9), Nov. 1979, pp. 712-714.
"GaAs Infrared Source for Optoelectronic Applications", 1963, International SOlid-State Ckts Con. pp. 108-109, Baird et al.
"Isolation of Junction Devices in GaAs Using Proton Bombardment", Foyt et al., Solid-State Electronics, 1969, vol. 12, pp. 209-214.
Calawa Arthur R.
Diadiuk Vicky
Hollis Mark A.
Le Han Q.
Smith Frank W.
Crane Sara W.
Massachusetts Institute of Technology
Tang Alice W.
LandOfFree
Ultra-high-speed photoconductive devices using semi-insulating l does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ultra-high-speed photoconductive devices using semi-insulating l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra-high-speed photoconductive devices using semi-insulating l will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1054638