Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-10-02
2007-10-02
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S287000, C257SE29072
Reexamination Certificate
active
11205484
ABSTRACT:
Alternate layers of wide band gap and narrow band gaps of different kinds of semiconductors are used to form multiple channels of a FET. The channels are doped or formed as 2-DEG/2-DHG in narrow band semiconductor by charge supply layer in the wide band gap semiconductor. The different kinds of semiconductors form heterojunctions to confine the electrons/holes in separate thin spikes layers. A number of spikes (3-10 nm thick) of different doped or 2-DEG/2-DHG concentrations in various channels can result in overall electron concentration gradient such as a 1/x3electron/hole concentrations profile. Such an electron/hole concentration gradient can result in a linear variation of drain current with voltage to obtain a wide dynamic range.
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Aina Olaleye Adetord
Fathimulla Ayub Mohammed
Hier Harry Stephen
Dolan Jennifer M.
Epitaxial Technologies
H.C. Lin Patent Agent
Jr. Carl Whitehead
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