Ultra-low phase noise GE MOSFETs

Details Ultra-low phase noise GE MOSFETs Ultra-low phase noise GE MOSFETs

1996-11-27

1998-07-14

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

257348, 257410, 257403, 257632, 257352, H01L 29267, H01L 2912

Patent

active

057809224

ABSTRACT:
A germanium-based field effect transistor has a passivation layer of aluminum oxide below a germanium channel and aluminum oxide gate oxide layer formed over the channel. The aluminum oxide layers are treated to reduce the density of surface state impurities, particularly arsenic released in the oxide layer as a result of forming the oxide layer. The low surface state germanium channel has very low phase noise and is suitable for use as a local oscillator in a heterodyne receiver.

REFERENCES:
patent: 3385731 (1968-05-01), Weimer
patent: 3589936 (1971-06-01), Tramposch
patent: 4654295 (1987-03-01), Yang et al.
patent: 5205871 (1993-04-01), Godbey et al.

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