Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-28
2000-03-07
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257396, H01L 2976, H01L 21265, H01L 21302
Patent
active
060343966
ABSTRACT:
The transistor structure in the present invention has a recessed region on the top surface of the semiconductor substrate. The transistor has a gate insulator within the recessed region and the gate insulator has a gate space within. A gate electrode is formed within and over the gate space. The transistor has a first insulator layer between the gate electrode and the semiconductor substrate. A semiconductor layer is formed over a portion of the semiconductor substrate uncovered by the gate insulator and the gate electrode. The transistor has a junction region with third type dopants. The junction region is located within the semiconductor substrate under a region uncovered by the gate insulator and the gate electrode. An extended junction region with first type dopants is also created. The extended junction region is located within the semiconductor substrate under the gate insulator. The transistor also has an anti-punchthrough region with second type dopants. The anti-punchthrough region is located within the semiconductor substrate under the gate electrode.
REFERENCES:
patent: 5525552 (1996-06-01), Huang
patent: 5583064 (1996-12-01), Lee et al.
patent: 5877056 (1999-03-01), Wu
Y. Nakahara et al., Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS, 1996 Symposium on VLSI Technology Digest of Technical Papers, pp. 174-175.
K. Imai et al., 0.15.mu.m Data-doped CMOS with On-Field Source Drain Contacts, 1996 Symposium on VLSI Technology Digest of Technical Papers, pp. 172-173.
Shye-Lin Wu et al., Characteristics of Polysilicon Contacted Shallow Junction Diode Formed with a Stacked-Amorphous-Silicon Film, IEEE Transactions on Electron Devices, vol. 40, No. 10, pp. 1797-1803.
Coleman William David
Jr. Carl Whitehead
Texas Instruments - Acer Incorporated
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