Use of an etch to reduce the thickness and around the edges...

Use of atomic oxygen process for improved barrier layer

Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to impr

Use of chlorine to fabricate trench dielectric in integrated...

Use of crystalline SiOx barriers for Si-based resonant...

Use of deuterated materials in semiconductor processing

Use of diamond as a hard mask material

Use of dilute steam ambient for improvement of flash devices

Use of disposable spacer to introduce gettering in SOI layer

Use of dummy poly spacers and divot fill techniques for...

Use of etch to blunt gate corners

Use of functional memory cells as guard cells in a...

Use of gate electrode workfunction to improve DRAM refresh

Use of high-K dielectric material in modified ONO structure...

Use of in-situ HCL etch to eliminate by oxidation...

Use of indium to define work function of p-type doped...

Use of mask shadowing and angled implantation in fabricating...

Use of MEV implantation to form vertically modulated N+ buried l

Use of poly resistor implant to dope poly gates

Use of sacrificial dielectric structure to form...