Use of deuterated materials in semiconductor processing

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438592, 438795, H01L 21336

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active

059727659

ABSTRACT:
Method of forming a film for a semiconductor device in which a source material comprising a deuterated species is provided during formation of the film.

REFERENCES:
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patent: 5872387 (1999-02-01), Lyding et al.
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