Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to impr

Details Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to impr Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to impr

1997-11-26

1999-06-01

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438297, 438439, 438780, 438789, 438790, 438794, H11L 218238, H01L 21336, H01L 2176, H01L 2131, H01L 21469

Patent

active

059083085

ABSTRACT:
Controlling the thickness of borophosphorous tetraethyl orthosilicate (BPTEOS) used as all or part of the first inter-layer dielectric (ILD0) in manufacturing a semiconductor device containing an array of transistors to control the field leakage between transistors. Reducing field leakage enables the thickness of field oxide, typically used to reduce field leakage, to be reduced to increase device density in the transistor array.

REFERENCES:
patent: 4963502 (1990-10-01), Teng et al.
patent: 5716891 (1998-02-01), Kodama

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