Use of chlorine to fabricate trench dielectric in integrated...

Details Use of chlorine to fabricate trench dielectric in integrated... Use of chlorine to fabricate trench dielectric in integrated...

2007-09-04

2007-09-04

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29152, C257SE21422, C257SE21682

Reexamination Certificate

active

11174081

ABSTRACT:
Chlorine is incorporated into pad oxide (110) formed on a silicon substrate (120) before the etch of substrate isolation trenches (134). The chlorine enhances the rounding of the top corners (140C) of the trenches when a silicon oxide liner (150.1) is thermally grown on the trench surfaces. A second silicon oxide liner (150.2) incorporating chlorine is deposited by CVD over the first liner (150.1), and then a third liner (150.3) is thermally grown. The chlorine concentration in the second liner (150.2) and the thickness of the three liners (150.1, 150.2, 150.3) are controlled to improve the corner rounding without consuming too much of the active areas (140).

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Navi, Mitra; Dunham, Scott T. “Oxidation of Silicon in TCA/O2Ambients” Electrical, Computer and Systems Engineering Department, Boston University, Boston, MA 02215, pp. 1-10.

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