Use of MEV implantation to form vertically modulated N+ buried l

Details Use of MEV implantation to form vertically modulated N+ buried l Use of MEV implantation to form vertically modulated N+ buried l

1997-02-18

1999-01-12

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438370, 438526, 438509, 438950, 257565, H01L 2174, H01L 2122, H01L 218222, H01L 21265

Patent

active

058588280

ABSTRACT:
High energy implantation through varying vertical thicknesses of one or more films is used to form a vertically modulated sub-collector, which simultaneously reduces both the vertical and lateral components of parasitic collector resistance in a vertically integrated bipolar device. The need for a sinker implant or other additional steps to reduce collector resistance is avoided. The necessary processing modifications may be readily integrated into conventional bipolar or BiCMOS process flows.

REFERENCES:
patent: 4710477 (1987-12-01), Chen
patent: 4711017 (1987-12-01), Lammert
patent: 4729964 (1988-03-01), Natsuaki
patent: 4732869 (1988-03-01), Van Attekum et al.
patent: 5121185 (1992-06-01), Tamba et al.
patent: 5160996 (1992-11-01), Odanaka
patent: 5436176 (1995-07-01), Shimizu et al.
patent: 5501993 (1996-03-01), Borland
Characteristics of Bipolar Transistors with Various Depths of n+ Buried Layers Formed by High-Energy Ion Implantation, Akihiro Tamba, Yutaka Kobayashi, Tadeshi Suzuki and Nobuyoshi Natsuaki, Japanese Journal of Applied Physics pp. 156-160, Dec. 1991.
Tamba A et al: Characteristics of Bipolar Transistors with Various Depth N+ Buried Layers Formed by High Energy Ion Implantation; Extended Abstracts of the International Conference on Solid State Devices and Materials; Tokyo, Aug. 24-26, 1988; No. Conf. 20, 24 Aug. 1988, Japan Society of Applied Physics; pp. 141-144; XP000042517.

Affiliated with

Also associated with

Rating

Use of MEV implantation to form vertically modulated N+ buried l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Use of MEV implantation to form vertically modulated N+ buried l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of MEV implantation to form vertically modulated N+ buried l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1514955