Use of in-situ HCL etch to eliminate by oxidation...

Details Use of in-situ HCL etch to eliminate by oxidation... Use of in-situ HCL etch to eliminate by oxidation...

2011-03-01

2011-03-01

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S275000, C257SE21632

Reexamination Certificate

active

07897447

ABSTRACT:
A method for reducing defects at an interface between a amorphized, recrystallized cleaved wafer layer and an unamorphized cleaved wafer layer can comprise an anneal and an exposure to hydrochloric acid. The anneal and acid exposure can be performed within an epitaxial reactor chamber to minimize wafer transport.

REFERENCES:
patent: 7190040 (2007-03-01), Liu
patent: 2006/0275971 (2006-12-01), Fogel et al.
patent: 2009/0130817 (2009-05-01), Pinto et al.

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