Use of atomic oxygen process for improved barrier layer

Details Use of atomic oxygen process for improved barrier layer Use of atomic oxygen process for improved barrier layer

2005-12-06

2005-12-06

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S135000, C257S204000

Reexamination Certificate

active

06972223

ABSTRACT:
A composite barrier layer formed between a glass film and active regions of a memory device is disclosed. The composite barrier layer comprises an oxide layer formed by atomic deposition process and an insulating layer, for example a nitride barrier layer, formed over the oxide layer. The composite barrier layer eliminates the diffusion of impurity atoms from the glass film into the active regions of the device.

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