Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-02
2005-08-02
Prenty, Mark V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S289000, C438S585000
Reexamination Certificate
active
06924190
ABSTRACT:
This invention relates to a method and resulting structure, wherein a DRAM may be fabricated by using silicon midgap materials for transistor gate electrodes, thereby improving refresh characteristics of access transistors. The threshold voltage may be set with reduced substrate doping requirements. Current leakage is improved by this process as well.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Micro)n Technology, Inc.
Prenty Mark V.
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