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Light emitting material

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent

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Lightly doped polycrystalline silicon resistor having a non-nega

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Lithium doped mercury cadmium telluride

Metal treatment – Barrier layer stock material – p-n type
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Low defect, high purity crystalline layers grown by selective de

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Low temperature P.sub.2 O.sub.5 oxide diffusion source

Metal treatment – Barrier layer stock material – p-n type
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Making epitaxial semiconductor device

Metal treatment – Barrier layer stock material – p-n type – Having at least three contiguous layers of semiconductive...
Reexamination Certificate

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Mask material for low temperature selective growth of silicon or

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Mass production of cross-section TEM samples by focused ion...

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Reexamination Certificate

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Material for light emitting element and method for crystal growt

Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy
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Mercury chalcogenide contact for semiconductor devices

Metal treatment – Barrier layer stock material – p-n type
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Method and structure for forming a trench within a semiconductor

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
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Method for fabricating a monolithic integration of a laser diode

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
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Method for forming integrated circuits bearing polysilicon of re

Metal treatment – Barrier layer stock material – p-n type
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Method for heat treatment of silicon wafers and silicon wafer

Metal treatment – Barrier layer stock material – p-n type
Reexamination Certificate

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Method for heat-treating gallium arsenide monocrystals

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Method for improved alignment for semiconductor devices with bur

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
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Method for low temperature bonding and bonded structure

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Reexamination Certificate

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Method for passivating a compound semiconductor surface and devi

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
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Method for plasma etching tapered and stepped vias

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
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Method for producing an electronically passivated surface on cry

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
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