Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Patent
1989-03-24
1994-10-11
Breneman, R. Bruce
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
437225, 437228, 156653, H01L 2912, H01L 2100, H01L 2102
Patent
active
053543866
ABSTRACT:
A multi-step plasma etch method for etching a tapered via having uniform bottom diameter ("CD") and extending through the resist and into the oxide layer of a coated semiconductor substrate, and a coated semiconductor substrate whose coating has been plasma etched to define such a tapered via. The first step of the inventive method is an anisotropic oxide plasma etch operation, preferably employing a plasma consisting primarily of CF.sub.4, which produces a non-tapered via having diameter substantially equal to CD and extending through the resist and into the oxide layer. A preferred embodiment of the inventive method includes a second step defining an upper sloping via portion without significantly increasing the diameter of a lower portion of the non-tapered via. This second step is a tapered resist plasma etch operation employing a mixture of oxygen (O.sub.2) and CF.sub.4. The slope of the upper sloping via portion may be controlled by varying the ratio of oxygen to CF.sub.4. In an alternative embodiment, the method produces a "stepped" via having an upper non-tapered portion which extends through the resist and has an opening diameter substantially greater than CD, and a lower non-tapered portion which extends through the oxide and has diameter substantially equal to CD.
REFERENCES:
patent: 4451326 (1984-05-01), Gwozdz
patent: 4698132 (1987-10-01), Dennis
Coburn, J., Plasma-Assisted Etching, Plasma Chem. and Plasma Process, vol. 2, No. 1, 1982, pp. 1-7.
T. A. Bartush, J. J. Colacino & G. S. Gati, "Sidewall Tailoring Using Two Different Reactive Ion Etchants in Succession," IBM Technical Disclosure Bulletin, vol. 20, No. 4, Sep. 1977.
"Sidewall Tailoring Using Two Different Reactive Ion Etchants In Succession," T. A. Bartush, J. J. Colacino and G. S. Gati, IBM Technical Bulletin, vol. 20, No. 4, dated Sep. 1977 (one page).
Abt Norman E.
Cheung David W.
McNally Peter A.
Breneman R. Bruce
Everhart B.
National Semiconductor Corporation
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