Low temperature P.sub.2 O.sub.5 oxide diffusion source

Details Low temperature P.sub.2 O.sub.5 oxide diffusion source Low temperature P.sub.2 O.sub.5 oxide diffusion source

1992-12-08

1994-09-27

Green, Anthony

Metal treatment

Barrier layer stock material, p-n type

252950, 252951, 423263, 423305, 423306, 437164, 437168, 501152, H01L 21225

Patent

active

053504615

ABSTRACT:
The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.

REFERENCES:
patent: 4025464 (1977-05-01), Yamashita et al.
patent: 4033790 (1977-07-01), Gunjigake et al.
patent: 4141738 (1979-02-01), Rapp
patent: 4175988 (1979-11-01), Rapp
patent: 4800175 (1989-01-01), Rapp
patent: 4846902 (1989-07-01), Pickrell
patent: 4891331 (1990-01-01), Rapp

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