Metal treatment – Barrier layer stock material – p-n type
Patent
1977-01-06
1978-05-02
Ozaki, G.
Metal treatment
Barrier layer stock material, p-n type
75134H, 148 15, 148187, 148178, 252 623ZT, H01L 3100
Patent
active
040872947
ABSTRACT:
Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury cadmium telluride include diffusion of a quantity of lithium into an already existing body of mercury cadmium telluride. Formation of NP junctions and P-P+ regions are disclosed using the compositions and methods of the present invention.
REFERENCES:
patent: 3483028 (1969-12-01), Bell et al.
patent: 3496024 (1970-02-01), Ruehrwein
patent: 3826721 (1974-07-01), Hall
patent: 3949223 (1976-04-01), Schmit et al.
patent: 3959026 (1976-05-01), Marine et al.
Honeywell Inc.
Munday John S.
Ozaki G.
LandOfFree
Lithium doped mercury cadmium telluride does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lithium doped mercury cadmium telluride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithium doped mercury cadmium telluride will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2156890