Lithium doped mercury cadmium telluride

Metal treatment – Barrier layer stock material – p-n type

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75134H, 148 15, 148187, 148178, 252 623ZT, H01L 3100

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active

040872947

ABSTRACT:
Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury cadmium telluride include diffusion of a quantity of lithium into an already existing body of mercury cadmium telluride. Formation of NP junctions and P-P+ regions are disclosed using the compositions and methods of the present invention.

REFERENCES:
patent: 3483028 (1969-12-01), Bell et al.
patent: 3496024 (1970-02-01), Ruehrwein
patent: 3826721 (1974-07-01), Hall
patent: 3949223 (1976-04-01), Schmit et al.
patent: 3959026 (1976-05-01), Marine et al.

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