Low defect, high purity crystalline layers grown by selective de

Details Low defect, high purity crystalline layers grown by selective de Low defect, high purity crystalline layers grown by selective de

1983-06-24

1985-06-11

Saba, William G.

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

29576E, 29576W, 29576J, 29578, 148175, 148DIG26, 148174, 156612, 156DIG65, 156DIG88, 357 4, 357 50, H01L 2120, H01L 2176

Patent

active

045226610

ABSTRACT:
The purity and perfection of a semiconductor is improved by depositing a patterned mask (12) of a material impervious to impurities of the semiconductor on a surface (14) of a blank (10). When a layer (40) of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings (16) in the mask (12) and will bridge the connecting portions of the mask to form a continuous layer (40) having improved purity, since only the portions (42) overlying the openings (16) are exposed to defects and impurities. The process can be reiterated and the mask translated to further improve the quality of grown layers.

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