Method for passivating a compound semiconductor surface and devi

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437235, 437244, 437980, H01L 2100, H01L 2102, H01L 21306, H01L 2956

Patent

active

048592536

ABSTRACT:
A method for passivating the surface of a compound semiconductor comprises annealing the substrate to form an anion rich surface layer containing cationic and anionic oxides and stripping the oxides to leave only a very thin anionic layer on the surface. The substrate is then subjected to an H.sub.2 plasma cleaning to remove chemisorbed oxygen. An N.sub.2 plasma cleaning is then performed to form an anionic nitride layer that is free of any cationic nitride. A layer of insulating material, such as, a native or other oxide, or a nitride, is deposited. The resulting structure has a very low interface state density such that the Fermi level may be swept through the entire band gap.

REFERENCES:
patent: 3411938 (1968-11-01), Storck et al.
patent: 3849276 (1974-11-01), Greiner
patent: 4058638 (1977-11-01), Morton
patent: 4297176 (1981-10-01), Hannah et al.
patent: 4336277 (1982-06-01), Brunshah et al.
patent: 4361114 (1982-11-01), Gurev
patent: 4436770 (1984-03-01), Nishizawa et al.
patent: 4514437 (1985-04-01), Nath
patent: 4526802 (1985-07-01), Sato
patent: 4597825 (1986-07-01), Freeouf et al.
patent: 4645683 (1987-02-01), Gourrier et al.
patent: 4706377 (1987-11-01), Shuskus
Gourrier, S., Core Level Photoemission Study of the Interaction of Plasmas with Real Gallium Arsenide (100) Surfaces, Surf. Sci., 152-153(2), pp. 1147-1152.
Friedel, P., Interactions Between Molecular Hydrogen and Molecular Nitrogen Plasmas and a Gallium Arsenide (100) Surface: Chemical and Electronic Properties, Appl. Phys. Lett., 42(6), pp. 509-511.
Friedel et al., Photoemission Study of the Passive of GaAs in a Nitrogen Multipolar Plasma, Philosophical Magazine B, 1987, vol. 55, No. 6, pp. 711-719.
Chang et al., Plasma Oxidation of GaAs, Applied Physics Letters, vol. 29, No. 1, Jul. 1976, pp. 56-58.
Yokoyama et al., Low-Termperature Plasma Oxidation of GaAs, Appl. Phys. Lett. 32(1), Jan. 1978, pp. 58-60.
Friedel et al., Study of the Interaction of Plasmas with III-V Semiconductor Surfaces, Application to Passivation, Surface Science 168 (1986), pp. 635-644.
Sugano et al., Oxidation of GaAs P Surface by Oxygen Plasma and Properties of Oxide Film., J. Electrochem. Soc.: Solid-State Science and Technology, vol. 121, No. 1, Jan. 1974, pp. 113-118.
Boher et al., Structural and Electrical Properties of Silicon Nitride Films Prepared by Multipolar Plasma-enhanced Deposition, J. Appl. Phys. 63(5), Mar. 1988, pp. 1464-1472.
Weinreich, Oxide Films Grown on GaAs in Oxygen Plasma, Communications, pp. 2924-2926.
Koshiga et al., The Anodic Oxidation of GaAs in an Oxygen Plasma Generated by A D.C. Electrical Discharge, Thin Solid Films 56 (1979), pp. 39-49.
Chesler et al., dc Plasma Anodization of GaAs, Appl. Phys. Lett. 32(1) Jan. 1978, pp. 60-62.
Boher et al., H.sub.2 Plasma Induced Effects on GaAs Examined by Photoluminescence, Ellipsometry and X-ray Photoemission, Proceedings of the Fourteenth International Symposium, Greece, Sep. 1987.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for passivating a compound semiconductor surface and devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for passivating a compound semiconductor surface and devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for passivating a compound semiconductor surface and devi will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2416013

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.