Mask material for low temperature selective growth of silicon or

Details Mask material for low temperature selective growth of silicon or Mask material for low temperature selective growth of silicon or

1994-05-09

1995-06-27

Breneman, R. Bruce

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

437 80, 437 83, 437 89, 437155, 437948, H01R 2122

Patent

active

054276306

ABSTRACT:
Epitaxial and polycrystalline layers of silicon and silicon-germanium alloys are selectively grown on a semiconductor substrate or wafer by forming over the wafer a thin film masking layer of an oxide of element selected from scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium and then growing the epitaxial layer over the wafer at temperatures below 650.degree. C. The epitaxial and polycrystalline layers do not grow on the masking layer. The invention overcomes the problem of forming epitaxial layers at temperatures above 650.degree. C. by providing a lower temperature process.

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