Method for heat-treating gallium arsenide monocrystals

Details Method for heat-treating gallium arsenide monocrystals Method for heat-treating gallium arsenide monocrystals

1991-03-29

1993-07-20

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

437248, 437939, 437 10, 148 332, 148DIG24, 148DIG3, 148DIG56, H01L 2930

Patent

active

052289273

ABSTRACT:
A heat-treating method for an indium-doped dislocation-free gallium arsenide monocrystal having a low carbon concentration and grown in the Liquid Encapsulated Czochralski method, comprising a two-step heat treatment:

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patent: 5051376 (1991-09-01), Yamada et al.
McGuigan et al, "Growth and Properties of Large-Diameter Indium Lattice-Hardened GaAs Crystals", Journal of Crystal Growth, vol. 76, No. 2 (Aug. 1986), pp. 217-232 (pp. 226-227, Section 2.5).
Patent Abstracts of Japan, vol. 11, No. 200 (C-432) [2647], Jun. 27, 1987.
Patent Abstracts of Japan, vol. 11, No. 267 (C-443) [2714], Aug. 28, 1987.
Patent Abstracts of Japan, vol. 12, No. 5 (C-467) [92852], Jan. 3, 1988.

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