Method for producing an electronically passivated surface on cry

Details Method for producing an electronically passivated surface on cry Method for producing an electronically passivated surface on cry

1984-10-05

1986-08-26

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

148DIG17, 29590, 357 52, 427 82, 427155, 4272556, H01L 2102, H01L 2148

Patent

active

046080970

ABSTRACT:
A method is described for producing an electronically passivated stable surface on silicon wafers. The passivation technique consists of first fluorinating the surface of a crystalline silicon wafer under inert atmospheric conditions. Such a treatment may consist of either a vapor phase or liquid phase application of HF at room temperature. The surface fluorinated wafer is then maintained in an inert atmosphere and a thin coating of an organic solid is applied to the wafer which does not disturb the underlying passivated silicon surface. The wafer may then be further processed into a variety of different devices.

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Insulating Films on Semiconductors, Proceedings of the Second International Conference, INFOS 81, Erlangen, Fed. Rep. of Ger., Apr. 27-29, 1981, by G. G. Roberts.

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