Material for light emitting element and method for crystal growt

Details Material for light emitting element and method for crystal growt Material for light emitting element and method for crystal growt

1989-08-09

1990-07-31

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

With contiguous layer doped to degeneracy

148 33, 148 334, 148 335, 148 336, 148DIG65, 148DIG66, 148DIG67, 148DIG99, 148DIG119, 437 23, 437127, 437130, 437133, 437904, 437905, H01L 2120, H01L 21208, H01L 2900, H01L 2906

Patent

active

049448110

ABSTRACT:
A material for a light emitting element most suited for a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. The material provides an at least two-layered structure composed of a GaAs substrate and a Sn doped InGaP layer developed on the substrate without forming a gradient layer therebetween. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75.
According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate.

REFERENCES:
patent: 3614549 (1971-10-01), Lorenz et al.
patent: 3899371 (1975-08-01), Ladany et al.
Blood et al., "GalnP Grown by Molecular Beam Epitaxy Doped With Be and Sn", J. Appl. Phys., vol. 53, No. 4, Apr. 1984, pp. 3145-3149.
Logan et al., "Electroluminescence in GaAs.sub.x P.sub.1-x, In.sub.x Ga.sub.1-x P, and Al.sub.x Ga.sub.1-x P Junctions With X.ltoreq.0.01", J. Appl. Phys., vol. 42, No. 6, May 1971, pp. 2328-2335.
Craford et al., "LED Technology", Solid State Technology, Jan. 1974, pp. 39-58.

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