Fabrication of nonpolar indium gallium nitride thin films,...

Floating single crystal thin film fabrication method

Gallium arsenide devices having reduced surface recombination ve

Gallium arsenide on sapphire heterostructure

Gallium arsenide phosphide mixed crystal epitaxial wafer with a

GaN-based devices using thick (Ga, Al, In)N base layers

Gettering

Gettering

Gettering technique for silicon-on-insulator wafers

Glass passivated gold diffused rectifier pellet and method for m

Graded compositions of II-VI semiconductors and devices utilizin

Group III-nitride thin films grown using MBE and bismuth

Group III-V compound crystal article using selective epitaxial g

Growth of GaN layers on quartz substrates

Growth of P type Group III-V compound semiconductor on Group IV

Halogen-doped Hg,Cd,Te

Heteroepitaxial growth of SiC on Si

HGCDTE epitaxially grown on crystalline support

High quality oxide films on substrates

High temperature layered silicon structures