Heteroepitaxial growth of SiC on Si

Details Heteroepitaxial growth of SiC on Si Heteroepitaxial growth of SiC on Si

1987-11-24

1989-09-12

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

148DIG29, 148DIG72, 148DIG97, 148DIG148, 156613, 437 81, 437100, 437126, 437939, 437770, 437976, H01L 2120, H01L 21205

Patent

active

048656593

ABSTRACT:
A heteroepitaxial growth method comprising growing a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of the semiconductor single-crystal film by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film being inclined at a certain angle with respect to the semiconductor single-crystal substrate.

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patent: 4623425 (1976-11-01), Suzuki et al.
Shibahara et al., "Surface Morphology of Cubic SiC (100) Grown on Si (100) by Chemical Vapor Deposition", J. Crystal Growth, 78 (1986), 538-544.
Liaw et al., "Epitaxial Growth and Characterization of .beta.-SiC Thin Films", J. Electrochem. Soc., Mar. 1985, pp. 642-648, vol. 132, No. 3.
Kuriowa et al., "Vapor-Phase Deposition of Beta-Silicon Carbide or Silicon Substrates", J. Electrochem. Soc., vol. 120, No. 1, Jan. 1973, pp. 138-140.
Bean et al., "Some Properties of Vapor Deposited SiC", J. Electrochem. Soc., vol. 114, No. 11, Nov. 1967, pp. 1158-1161.
Choudhury et al., ".beta.-Silicon Carbide Films", J. Electrochem. Soc., vol. 116, No. 10, (1969), pp. 1440-1443.
Shigeta et al., "Inclined Epitaxy of (411) Beta Silicon Carbide on (511) Silicon . . . ", (Abstract only), Appl. Phys. Lett., vol. 50, No. 23, 8 Jun. 1987, pp. 1684-1685.
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