Gallium arsenide on sapphire heterostructure

Details Gallium arsenide on sapphire heterostructure Gallium arsenide on sapphire heterostructure

1988-12-06

1990-03-13

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

148 334, 148DIG25, 148DIG56, 148DIG72, 148DIG97, 156610, 437 84, 437112, 437126, H01L 2930, H01L 2912

Patent

active

049080741

ABSTRACT:
Disclosed is a process for the production of a semiconductor element by introducing a gas of an organic metal compound of an element of the group III and a gas containing an element of the group V into a reaction chamber in which a substrate of a single crystal of alumina is arranged and epitaxially growing a III.V compound semiconductor by the thermal decomposition vapor deposition of the compound of the elements of the groups III.V, said process comprises, in combination, the steps of (A) heating the substrate at a temperature of 400.degree. to 550.degree. C., introducing the gas of the organic metal compound of the element of the group III and the gas containing the element of the group V into the reaction chamber and forming a film of a compound of the elements of the groups III.V on the surface of the substrate by the vapor deposition, (B) heating the substrate obtained at the step (A) at a temperature higher than 550.degree. C. but lower than 750.degree. C. and introducing the gas containing the element of the group V to anneal the film of the compound of the elements of the groups III.V, and (C) maintaining the substrate obtained at the step (B) at a temperature higher than 550.degree. C. but lower than 750.degree. C. and introducing the gas of the organic metal compound of the element of the group III and the gas containing the element of the group V to effect the vapor deposition of a compound semiconductor of the elements of the groups III.V with the film of the III.V compound film obtained at the step (B) being as the nucleus.

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