Metal treatment – Barrier layer stock material – p-n type
Patent
1987-02-02
1988-05-10
Ozaki, George T.
Metal treatment
Barrier layer stock material, p-n type
148 335, 148DIG64, 252 623ZT, 428620, H01L 21363
Patent
active
047433108
ABSTRACT:
A layer of HgCdTe (15) is epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are non-isothermal. In a second growth step embodiment, the source (3) and substrate (5) are isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the finished HgCdTe layer (15).
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Bray Burton A.
Chan Hakchill
Ju Fred
Kay Robert E.
Ford Aerospace & Communications Corporation
Ozaki George T.
Radlo Edward J.
Zerschling Keith L.
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