Gettering technique for silicon-on-insulator wafers

Details Gettering technique for silicon-on-insulator wafers Gettering technique for silicon-on-insulator wafers

1998-02-19

2000-07-04

Bowers, Charles

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

438473, H01L 21322

Patent

active

060833246

ABSTRACT:
A gettering layer in a silicon-on-insulator wafer. The gettering layer may be formed by implanting gas-forming particles or precipitate-forming particles beneath the active region of the silicon layer and thermally treating the gas-forming ions to produce microbubbles or precipitates within the silicon layer. The microbubbles an/or precipitates create trapping sites for mobile impurity species, thus gettering the impurities. In another embodiment, a polysilicon layer is formed on a donor silicon wafer prior to separating a thin layer of silicon from the donor wafer. The thin layer of silicon is bonded to a backing wafer, the polysilicon layer provides a gettering layer between the active silicon and the backing wafer.

REFERENCES:
patent: 5198371 (1993-03-01), Li
patent: 5374564 (1994-12-01), Bruel
patent: 5443661 (1995-08-01), Oguro et al.
Chu et al., "Recent applications of plasma immersion ion implantation", Semiconductor International pp. 165-172, Jun. 1996.

Affiliated with

Also associated with

Rating

Gettering technique for silicon-on-insulator wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gettering technique for silicon-on-insulator wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gettering technique for silicon-on-insulator wafers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1482371